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vishay siliconix siz704dt new product document number: 65367 s09-1921-rev. a, 28-sep-09 www.vishay.com 1 n-channel 30-v (d-s) mosfets product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) channel-1 30 0.024 at v gs = 10 v 12 a 3.8 nc 0.030 at v gs = 4.5 v 12 a channel-2 30 0.0135 at v gs = 10 v 16 a 7.3 nc 0.017 at v gs = 4.5 v 16 a orderin g information: SIZ704DT-T1-GE3 (lead (p b )-free and halogen-free) g 1 g 2 s 2 s 2 d 1 d 1 1 6 5 4 2 3 3.73 mm 6.00 mm powerpair? 6 x 3.7 d 1 s 1 /d 2 pin 1 g hs g ls g n d g n d v i n v i n 1 6 5 4 2 3 v i n v sw v in /d 1 gnd/s 2 n-channel 2 mosfet n-channel 1 mosfet g hs /g 1 v s w /s 1 /d 2 g ls /g 2 notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/ppg?73257 ). the powerpair is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation pr ocess in manufacturing. a solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. f. maximum under steady state conditions is 72 c/ w for channel-1 and 67 c/ w for channel-2. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol channel-1 channel-2 unit drain-source voltage v ds 30 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 12 a 16 a a t c = 70 c 12 a 16 a t a = 25 c 9.4 b, c 14 b, c t a = 70 c 7.5 b, c 11.2 b, c pulsed drain current i dm 30 40 source drain current diode current t c = 25 c i s 12 a 16 a t a = 25 c 3.1 b, c 3.7 b, c single pulse avalanche current l = 0.1 mh i as 10 15 single pulse avalanche energy e as 511mj maximum power dissipation t c = 25 c p d 20 30 w t c = 70 c 12.9 19 t a = 25 c 3.7 b, c 4.5 b, c t a = 70 c 2.4 b, c 2.9 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol channel-1 channel-2 unit typ. max. typ. max. maximum junction-to-ambient b, f t 10 s r thja 26 34 21 28 c/ w maximum junction-to-case (drain) steady state r thjc 4.7 6.2 3.2 4.2 features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfets ? 100 % r g tested ? 100 % uis tested ? compliant to rohs directive 2002/95/ec applications ? notebook system power ? pol ? low current dc/dc
www.vishay.com 2 document number: 65367 s09-1921-rev. a, 28-sep-09 vishay siliconix siz704dt new product notes: a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a ch-1 30 v v gs = 0 v, i d = 250 a ch-2 30 v ds temperature coefficient v ds /t j i d = 250 a ch-1 35 mv/c i d = 250 a ch-2 33 v gs(th) temperature coefficient v gs(th) /t j i d = 250 a ch-1 - 4.5 i d = 250 a ch-2 - 5 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a ch-1 1 2.5 v v ds = v gs , i d = 250 a ch-2 1.2 2.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v ch-1 100 na ch-2 100 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v ch-1 1 a v ds = 30 v, v gs = 0 v ch-2 1 v ds = 30 v, v gs = 0 v, t j = 55 c ch-1 5 v ds = 30 v, v gs = 0 v, t j = 55 c ch-2 5 on-state drain current b i d(on) v ds 5 v, v gs = 10 v ch-1 20 a v ds 5 v, v gs = 10 v ch-2 20 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 7.8 a ch-1 0.020 0.024 v gs = 10 v, i d = 10 a ch-2 0.0105 0.0135 v gs = 4.5 v, i d = 7 a ch-1 0.024 0.030 v gs = 4.5 v, i d = 7 a ch-2 0.0135 0.017 forward transconductance b g fs v ds = 10 v, i d = 7.8 a ch-1 17 s v ds = 10 v, i d = 10 a ch-2 24 dynamic a input capacitance c iss channel-1 v ds = 15 v, v gs = 0 v, f = 1 mhz channel-2 v ds = 15 v, v gs = 0 v, f = 1 mhz ch-1 435 pf ch-2 846 output capacitance c oss ch-1 95 ch-2 187 reverse transfer capacitance c rss ch-1 42 ch-2 72 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 7.8 a ch-1 8 12 nc v ds = 15 v, v gs = 10 v, i d = 10 a ch-2 15.4 23 channel-1 v ds = 15 v, v gs = 4.5 v, i d = 7.8 a channel-2 v ds = 15 v, v gs = 4.5 v, i d = 10 a ch-1 3.8 6 ch-2 7.3 11 gate-source charge q gs ch-1 1.4 ch-2 2.3 gate-drain charge q gd ch-1 1.1 ch-2 2.2 gate resistance r g f = 1 mhz ch-1 0.6 3.2 6.4 ch-2 0.2 0.8 1.6
document number: 65367 s09-1921-rev. a, 28-sep-09 www.vishay.com 3 vishay siliconix siz704dt new product notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit dynamic a tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 15 v, r l = 2.4 i d ? 6.3 a, v gen = 4.5 v, r g = 1 channel-2 v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 4.5 v, r g = 1 ch-1 15 30 ns ch-2 15 30 rise time t r ch-1 12 24 ch-2 12 24 turn-off delay time t d(off) ch-1 13 26 ch-2 13 26 fall time t f ch-1 10 20 ch-2 10 20 tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 15 v, r l = 2.4 i d ? 6.3 a, v gen = 10 v, r g = 1 channel-2 v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 10 v, r g = 1 ch-1 5 10 ch-2 9 18 rise time t r ch-1 10 20 ch-2 9 18 turn-off delay time t d(off) ch-1 15 30 ch-2 14 28 fall time t f ch-1 10 20 ch-2 8 16 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c ch-1 12 a ch-2 16 pulse diode forward current a i sm ch-1 30 ch-2 40 body diode voltage v sd i s = 6.3 a, v gs = 0 v ch-1 0.8 1.2 v i s = 3 a, v gs = 0 v ch-2 0.78 1.2 body diode reverse recovery time t rr channel-1 i f = 6.3 a, di/dt = 100 a/s, t j = 25 c channel-2 i f = 10 a, di/dt = 100 a/s, t j = 25 c ch-1 15 30 ns ch-2 17 34 body diode reverse recovery charge q rr ch-1 7 15 nc ch-2 9.5 19 reverse recovery fall time t a ch-1 9 ns ch-2 10 reverse recovery rise time t b ch-1 6 ch-2 7
www.vishay.com 4 document number: 65367 s09-1921-rev. a, 28-sep-09 vishay siliconix siz704dt new product channel-1 typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10 v thr u 4 v v gs =3 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.010 0.015 0.020 0.025 0.030 0.035 0 5 10 15 20 25 30 v gs =10 v v gs =4.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 0246 8 v ds =24 v i d =7. 8 a v ds =15 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d c rss 0 100 200 300 400 500 600 0 5 10 15 20 25 30 c iss c oss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 v gs =4.5 v v gs =10 v i d =7. 8 a t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on)
document number: 65367 s09-1921-rev. a, 28-sep-09 www.vishay.com 5 vishay siliconix siz704dt new product channel-1 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 10 1 100 t j = 25 c t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1. 8 1.9 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power 0 0.02 0.04 0.06 0.0 8 0246 8 10 t j = 25 c t j = 125 c i d =7. 8 a - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 5 10 15 20 25 30 po w er (w) time (s) 10 1000 0.1 0.01 0.001 100 1 safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 ms limited b yr ds(on) * b v dss limited 1ms 10 ms 1s 10 s dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d 100 s
www.vishay.com 6 document number: 65367 s09-1921-rev. a, 28-sep-09 vishay siliconix siz704dt new product channel-1 typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 5 10 15 20 25 0 255075100125150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) power, junction-to-case 0 5 10 15 20 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation (w)
document number: 65367 s09-1921-rev. a, 28-sep-09 www.vishay.com 7 vishay siliconix siz704dt new product channel-1 typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 s qu are wa v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 72 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 normalized thermal transient impedance, junction-to-case 1 0.1 d u ty cycle = 0.5 s qu are wa v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 10 -3 10 -2 10 -4 0.02 single p u lse 0.1 0.2 0.05 10 -1
www.vishay.com 8 document number: 65367 s09-1921-rev. a, 28-sep-09 vishay siliconix siz704dt new product channel-2 typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =10 v thr u 5 v v gs =3 v v gs =4 v 0.005 0.010 0.015 0.020 0.025 0 1020304050 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs =10 v v gs =4.5 v 0 2 4 6 8 10 0.0 3.2 6.4 9.6 12. 8 16.0 - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds = 20 v v ds =10 v i d =10a v ds = 15 v transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 012345 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = 125 c t c = - 55 c c rss 0 220 440 660 88 0 1100 0 5 10 15 20 25 30 c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c oss 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) v gs =4.5 v v gs =10 v i d =10a
document number: 65367 s09-1921-rev. a, 28-sep-09 www.vishay.com 9 vishay siliconix siz704dt new product channel-2 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 0.01 0.001 0.1 10 100 t j = 150 c t j = 25 c - 0. 8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance ( v ) v gs(th) t j - temperat u re (c) i d =5ma on-resistance vs. gate-to-source single pulse power 0.00 0.01 0.02 0.03 0.04 0.05 0.06 01234567 8 910 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t j = 25 c t j = 125 c i d =10a 0 10 20 30 40 50 po w er (w) time (s) 10 1000 0.1 0.01 0.001 100 1 safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 ms limited b yr ds(on) * b v dss limited 1ms 10 ms 1s 10 s dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d 100 s
www.vishay.com 10 document number: 65367 s09-1921-rev. a, 28-sep-09 vishay siliconix siz704dt new product channel-2 typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 10 20 30 40 0 25 50 75 100 125 150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) power, junction-to-case 0 5 10 15 20 25 30 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation (w)
document number: 65367 s09-1921-rev. a, 28-sep-09 www.vishay.com 11 vishay siliconix siz704dt new product channel-2 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65367 . normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 s qu are wa v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 67 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 normalized thermal transient impedance, junction-to-case 1 0.1 d u ty cycle = 0.5 s qu are wa v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.02 single p u lse 0.1 0.2 0.05 10 -3 10 -2 10 -4 10 -1
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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